DF05435 Datasheet | Dynex Semiconductor

FEATURES s Double side cooling s High surge capability s Low recovery charge VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V 3500 3400 3200 3000 Conditions DF054 35 DF054 34 DF054 32 DF054 30 VRSM = VRRM + 100V Lower voltage grades available. Outline type code: CB450. See Package Details for further information. CURRENT RATINGS Symbol Double Side Cooled IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65o C Tcase = 65o C Tcase = 65o C 1470 2310 2130 A A A Parameter Conditions Max. Units Single Side Cooled (Anode side) IF(AV) IF(RMS) IF Mean forward current RMS value Continuous (direct) forward current Half wave resistive load, Tcase = 65o C Tcase = 65o C Tcase = 65o C 984 1540 1365 A A A 1/7 DF054 SURGE RATINGS Symbol IFSM I2t IFSM I2t Parameter Surge (non-repetitive) forward current 10ms half sine; with 0% VRRM, Tj = 150o C I2t for fusing Surge (non-repetitive) forward current 10ms half sine; with 50% VRRM, Tj = 150o C I2t for fusing 627 x 103 A2s 980 x 103 11.2 A2s k A Conditions Max. 14.0 Units k A THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Double side cooled Rth(j-c) Thermal resistance - junction to case Single side cooled Cathode dc Clamping force 23.5k N with mounting pound Forward (conducting) Double side Single side -55 21.0 0.038 0.003 0.006 150 150 25.0 o Min. dc Anode dc - Max. 0.018 0.034 Units o C/W o C/W C/W C/W C/W o o Rth(c-h) Thermal resistance - case to heatsink o Tvj Tstg - Virtual junction temperature Storage temperature range Clamping force C C o k N CHARACTERISTICS Symbol VFM IRRM trr QRA1 IRM K VTO r T VFRM Forward voltage Peak reverse current Reverse recovery time Recovered charge (50% chord) Reverse recovery current Soft factor Threshold voltage Slope resistance Forward recovery voltage At Tvj = 150o C At Tvj = 150o C di/dt = 1000A/µs, Tj = 125o C IF = 1000A, di RR/dt = 100A/µs Tcase = 150o C, VR = 100V Parameter Conditions At 1500A...